tsm10p06 60v p-channel mosfet 1/4 version: b13 to - 252 (dpak) product summary v ds (v) r dson (m ? ) i d (a) -60 170 @ v gs = -10v -5 220 @ v gs = -4.5v -2 features advance trench process technology high density cell design for ultra low on-resistan ce application load switch pa switch ordering information part no. package packing tsm10p06cp rog to-252 2.5kpcs / 13 reel note: g denote for halogen free product absolute maximum rating (t a = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v continuous drain current i d -10 a pulsed drain current i dm -20 a continuous source current (diode conduction) a,b i s -10 a single pulse avalanche energy (note 2) e as 5 mj avalanche current i as -10 a total power dissipation @ t c =25c p dtot 37 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to case thermal resistance r ? jc 4 o c/w junction to ambient thermal resistance (pcb mounted ) r ? ja 70 o c/w notes: a. pulse width limited by the maximum junction temp erature b. surface mounted on fr4 board, t 10 sec. block diagram p-channel mosfet pin definition : 1. gate 2. drain 3. source
tsm10p06 60v p-channel mosfet 2/4 version: b13 electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss -60 -- -- v gate threshold voltage v ds = v gs , i d = 250a v gs(th) -1 -- -- v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = -60v, v gs = 0v i dss -- -- -1 a on-state drain current a v ds = -5v, v gs = -10v i d(on) -10 -- -- a drain-source on-state resistance v gs = -10v, i d = -5a r ds(on) -- 130 170 m ? v gs = -4.5v, i d = -2a -- 170 220 forward transconductance v ds = -15v, i d = -3.5a g fs -- 6 -- s diode forward voltage i s = -2.5a, v gs = 0v v sd -- -1.25 -1.5 v dynamic total gate charge v ds = -15v, i d = -3.5a, v gs = -10v q g -- 6 -- nc gate-source charge q gs -- 1.7 -- gate-drain charge q gd -- 1.5 -- input capacitance v ds = -30v, v gs = 0v, f = 1.0mhz c iss -- 540 -- pf output capacitance c oss -- 60 -- reverse transfer capacitance c rss -- 30 -- switching turn-on delay time v dd = -15v, r l = 15 ? , i d = -1a, v gen = -10v, r g = 6 ? t d(on) -- 7 -- ns turn-on rise time t r -- 9 -- turn-off delay time t d(off) -- 19 -- turn-off fall time t f -- 4 -- notes 1: pulse test: pw 300s, duty cycle 2% notes 2: l=0.1mh, notes 3: for design aid only, not subject to production tes ting. notes 4 : switching time is essentially independent of oper ating temperature.
tsm10p06 60v p-channel mosfet 3/4 version: b13 to-252 mechanical drawing to-252 dimension dim millimeters inches min max min max a 2.30 bsc 0.090 bsc b 10.20 10.80 0.402 0.425 c 5.30 5.70 0.209 0.224 d 6.30 6.70 0.248 0.264 e 2.10 2.50 0.083 0.098 f 0.00 0.20 0.000 0.008 g 4.80 5.20 0.189 0.205 g1 0.40 0.80 0.016 0.031 h 0.40 0.60 0.016 0.024 h1 0.35 0.65 0.014 0.026 j 3.35 3.65 0.132 0.144 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.067
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